Search results for "Mass spectrometry"
showing 10 items of 2544 documents
Quartz resonators for penning traps toward mass spectrometry on the heaviest ions
2020
We report on cyclotron frequency measurements on trapped 206,207Pb+ ions by means of the non-destructive Fourier-transform ion-cyclotron-resonance technique at room temperature. In a proof-of-principle experiment using a quartz crystal instead of a coil as a resonator, we have alternately carried out cyclotron frequency measurements for 206Pb+ and 207Pb+ with the sideband coupling method to obtain 21 cyclotron-frequency ratios with a statistical uncertainty of 6 × 10−7. The mean frequency ratio R¯ deviates by about 2σ from the value deduced from the masses reported in the latest Atomic Mass Evaluation. We anticipate that this shift is due to the ion–ion interaction between the simultaneousl…
Fluence effect on ion-implanted As diffusion in relaxed SiGe
2005
A systematic study on the fluence (5 × 108 − 4 × 1014 cm−2) dependence of ion-implanted As diffusion in relaxed Si1 − xGex alloys (with x = 0.2, 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above 4 × 1011 cm−2 a clear fluence-dependent enhancement in arsenic diffusion was noted for Si1 − xGex. In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of SiGe.
HCl gas gettering of low-cost silicon
2013
HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…
Annealing behaviour of aluminium-implanted InP
2000
The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…
Time resolved measurements of hydrogen ion energy distributions in a pulsed 2.45 GHz microwave plasma
2017
A plasma diagnostic study of the Ion Energy Distribution Functions (IEDFs) of H+, H+2H2+, and H+3H3+ ions in a 2.45 GHz hydrogen plasma reactor called TIPS is presented. The measurements are conducted by using a Plasma Ion Mass Spectrometer with an energy sector and a quadrupole detector from HIDEN Analytical Limited in order to select an ion species and to measure its energy distribution. The reactor is operated in the pulsed mode at 100 Hz with a duty cycle of 10% (1 ms pulse width). The IEDFs of H+, H+2H2+, and H+3H3+ are obtained each 5 μs with 1 μs time resolution throughout the entire pulse. The temporal evolution of the plasma potential and ion temperature of H+ is derived from the d…
Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses
2016
Abstract Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS 2 –20Ga 2 S 3 ) 100−х (СsCl) x , 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS 2 –20Ga 2 S 3 ) 85 (СsCl) 15 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defe…
On-line commissioning of SHIPTRAP
2006
Abstract The on-line commissioning of the Penning-trap mass spectrometer SHIPTRAP was successfully completed with a mass measurement of holmium and erbium radionuclides produced at SHIP. A large fraction of contaminant ions created in the stopping cell was identified to originate from the buffer-gas supply system. Using a liquid nitrogen cold trap they were reduced to a tolerable amount and mass measurements of Er 147 , Er 148 , and Ho 147 with relative uncertainties of about 1 × 1 0 − 6 were performed.
Direct mass measurements and ionization potential measurements of the actinides
2019
Abstract The precise determination of atomic and nuclear properties such as masses, differential charge radii, nuclear spins, electromagnetic moments and the ionization potential of the actinides has been extended to the late actinides in recent years. In particular, laser spectroscopy and mass spectrometry have reached the region of heavy actinides that can only be produced only at accelerator facilities. The new results provide deeper insight into the impact of relativistic effects on the atomic structure and the evolution of nuclear shell effects around the deformed neutron shell closure at N = 152. All these experimental activities have also opened the door to extend such measurements t…
Measurement of the laser resonance ionization efficiency for lutetium
2019
Abstract The development of a highly efficient resonance ionization scheme for lutetium is presented. A laser ion source, based on the all-solid-state Titanium:sapphire laser system, was used at the 30 keV RISIKO off-line mass separator to characterize different possible optical excitation schemes in respect to their ionization efficiency. The developed laser resonance ionization scheme can be directly applied to the use at radioactive ion beam facilities, e. g. at the CERN-MEDICIS facility, for large-scale production of medical radioisotopes.
A novel MALDI-MS approach for the analysis of neutral metallosupramolecular architectures
2011
Matrix assisted laser desorption/ionisation mass spectrometry (MALDI-MS) methods have been developed for the characterisation of neutral [2×2] metallogrids derived fromdiimine, dihydrazone and diacylhydrazone ligands. Such grids may be protonated in solution to give cationic species but in most cases these are labile, so that rather delicate conditions are required for observation of the intact metallogrids as monoprotonated derivatives in the gas phase. As a MALDI matrix, 2,4,6-trihydroxyacetophenone (THAP) is sufficiently acidic to enable monoprotonation of the grids unaccompanied by dissociation, and if the grid sample is initially deposited by a layering technique to avoid any prelimina…